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HL: Fachverband Halbleiterphysik

HL 38: ZnO I

HL 38.5: Vortrag

Donnerstag, 29. März 2007, 11:00–11:15, H17

Depletion layer spectroscopy on bulk and thin film ZnO — •H. von Wenckstern, H. Schmidt, G. Biehne, R. Pickenhain, M. Lorenz, and M. Grundmann — Universität Leipzig, Fakultät für Physik, Linnéstrasse 5, 04103 Leipzig

Experimental investigations of deep defects in ZnO (especially the characterization of minority traps) are scanty. Hole traps with E_t ∼ 150 meV and 280 meV, respectively, were found by deep level transient spectroscopy (DLTS) for N⁺ implanted ZnO crystals [1], however, systematic investigations are necessary to conclude on the macroscopic origin of these defects. Minority and majority carrier traps in bulk ZnO and epitaxial PLD ZnO thin films are investigated by means of depletion layer spectroscopy. For that, high-speed Pd/ZnO Schottky diodes [2], pn hetero- or pn homojunctions [1] are prepared and investigated for temperatures ranging from 20 K to 330 K. The density (N_t) and thermal activation energy (E_t) of shallow majority carrier defects, and N_t, E_t, and the capture cross section σ of deep majority and minority carrier traps are discussed.