Regensburg 2007 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 39: Impurities/amorphous semiconductors

HL 39.1: Talk

Thursday, March 29, 2007, 12:15–12:30, H14

Defect density profiling by absorption depth dependent thermally stimulated currents in microcrystalline silicon — •Sven Burdorf, Nacera Souffi, Gottfried Bauer, and Rudolf Brüggemann — Institut für Physik, Carl von Ossietzky Universität Oldenburg, 26111 Oldenburg

The defect density profile of an inhomogeneous microcrystalline silicon sample (µc-Si:H) is studied using the experimental technique of thermally stimulated currents (TSC). The TSC measurements are carried out with initial excitation conditions that differ by the absorption depths of the light illuminating the sample. The measured TSC spectra do not change with varying absorption depths. The determination of the densities of gap states leads to the conclusion that the defect density near the surface is at least one order of magnitude larger than the average defect density over the entire sample. In addition, constant photocurrent method (CPM) results support this interpretation.