HL 4: Semiconductor Laser I
Montag, 26. März 2007, 10:45–13:00, H13
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10:45 |
HL 4.1 |
High-temperature measurements and reliability of red 660 nm AlGaInP-VCSEL — •Marcus Eichfelder, Robert Roßbach, Michael Jetter, Heinz Schweizer, and Peter Michler
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11:00 |
HL 4.2 |
Micro-Raman investigation of facet temperatures during catastrophic optical damage in AlGaInP laser diodes — •Marwan Bou Sanayeh, Peter Brick, Bernt Mayer, Martin Müller, Martin Reufer, Wolfgang Schmid, Klaus Streubel, Sandy Schwirzke-Schaaf, and Jens Tomm
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11:15 |
HL 4.3 |
Measurement of the linewidth enhancement factor of semiconductor lasers — •Wolfgang Rick, Jens von Staden, Tobias Gensty, Guido Guiliani, and Wolfgang Elsäßer
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11:30 |
HL 4.4 |
Measurements of the Linewidth Enhancement Factor of Distributed Feedback Quantum Cascade Lasers by the Self-Mixing Technique — •Jens von Staden, Tobias Gensty, Wolfgang Elsäßer, Guido Giuliani, and Christian Mann
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11:45 |
HL 4.5 |
Tunable two color semiconductor lasers — •Carsten Brenner, Claus-Stefan Friedrich, Michael Breede, Stefan Hoffmann, and Martin Hofmann
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12:00 |
HL 4.6 |
Low threshold 1260nm (GaIn)(NAs) semiconductor disk laser — •Wolfgang Diehl, Bernadette Kunert, Stefan Reinhard, Peter Brick, and Wolfgang Stolz
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12:15 |
HL 4.7 |
Tuneable Turnkey THz Sources Based on Diode Lasers — •Sebastian Berning, Icksoon Park, Tobias Gensty, and Wolfgang Elsäßer
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12:30 |
HL 4.8 |
Amplified hybrid-mode-locked semiconductor laser in an external cavity with intracavity dispersion control — •Tobias Schlauch, Tuyen Le, Stefan Hoffmann, Martin Hofmann, Andreas Klehr, and Götz Erbert
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12:45 |
HL 4.9 |
Beitrag abgesagt — •XXX XXX
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