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HL: Fachverband Halbleiterphysik

HL 4: Semiconductor Laser I

HL 4.1: Vortrag

Montag, 26. März 2007, 10:45–11:00, H13

High-temperature measurements and reliability of red 660 nm AlGaInP-VCSEL — •Marcus Eichfelder¹, Robert Roßbach¹, Michael Jetter¹, Heinz Schweizer², and Peter Michler¹ — ¹Institut für Strahlenphysik, Allmandring 3, 70569 Stuttgart, Germany — ²4. Physikalisches Institut, Pfaffenwaldring 57, 70569 Stuttgart, Germany

In this paper we discuss the potential and the possible limitations of the AlGaInP material system and its consequences for the application as vertical-cavity surface-emitting lasers (VCSEL). Epitaxial and technological solutions were presented to overcome some parts of the inherent problems. Measurements of internal heating of oxide-confined 660 nm AlGaInP-VCSEL are compared with calculated data by a cylindrical heat dissipation model to improve the heat removal out of the device. Pulsed lasing operation of a 660 nm VCSEL at +140^∘C heatsink temperature is demonstrated, where we exceeded more than 0.5 mW and at 170^∘C more than 0.1 mW output power was achieved. Continuous-wave measurements of our 660 nm devices show laser emission at 60^∘C with an optical output power over 0.1 mW and operating times of more than 3700 hours without spontaneous failure.