Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe

HL: Fachverband Halbleiterphysik

HL 4: Semiconductor Laser I

HL 4.7: Vortrag

Montag, 26. März 2007, 12:15–12:30, H13

Tuneable Turnkey THz Sources Based on Diode Lasers — •Sebastian Berning, Icksoon Park, Tobias Gensty, and Wolfgang Elsäßer — Institut für Angewandte Physik, Technische Universität Darmstadt, Schloßgartenstraße 7, D-64289 Darmstadt

The continuous-wave generation of Terahertz (THz) radiation by means of diode laser devices has experienced extensive research in the past decade. A promising approach in this field of research is based on laser diodes in an external double-cavity setup simultaneously operating at two wavelengths (2λ-ECDL) to drive non-linear photomixers emitting cw radiation at the difference frequency in the THz regime.
In the present work, we address the long-term stability of the laser setup combined with fast, repeatable scanning throughout the entire frequency range, as desirable for spectroscopic applications. For this purpose, we realize a two-colour ECDL device with a new low-loss cavity design allowing simple control of all relevant beam parameters, as the total and relative intensities, the beat frequency and the absolute wavelengths of the two laser modes. Furthermore, we present how modern microprocessor control is introduced to the miniaturized setup in order to enable active stabilization of the above discussed beam properties, allowing for extensive parameter studies and systematic optimizations for this class of THz sources.