Regensburg 2007 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 45: ZnO II
HL 45.10: Vortrag
Donnerstag, 29. März 2007, 16:30–16:45, H17
Homoepitaxially grown ZnO thin films — •Stefan Lautenschläger1, Christian Neumann1, Joachim Sann1, Niklas Volbers1, Swen Graubner1, Bruno Meyer1, Jürgen Bläsing2, Alois Krost2, Frank Bertram2, and Jürgen Christen2 — 1I. Physikalisches Institut, Justus- Liebig- Universität Gießen — 2Institut für Experimentelle Physik, Otto- von- Guericke Universität Magdeburg
We report on homoepitaxially ZnO thin films, grown on chemo- mechanically polished Crystec single crystals. To prepare the substrates for growth we employed a high temperature annealing step, which produced atomically flat surfaces and removed all of the surface and subsurface damage. We used Photoluminescence (PL), Cathodoluminescence (CL), Secondary Ion Mass Spectroscopy (SIMS), Hall measurements, high resolution X-Ray diffraction and Atomic Force Microscopy (AFM) to characterize the epilayers. Two dimensional epitaxial growth was achieved without an additional buffer layer. The substrate had a rocking halfwidth of 27'' which can be compared with that of the film of 17''. The films had superior band edge luminescence as compared with the substrate for which the green luminescence band is dominating. The impurity content in the substrates, especially Li is reduced by the high temperature annealing step and drops further to the detection limit in the thin films.