Regensburg 2007 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 45: ZnO II

HL 45.11: Talk

Thursday, March 29, 2007, 16:45–17:00, H17

Annealing Studies on N and As implanted Zinc Oxide — •Niklas Volbers¹, Stefan Lautenschläger¹, Joachim Sann¹, Kay Potzger², and Bruno K. Meyer¹ — ¹I. Physikalisches Institut, Heinrich-Buff-Ring 16, Justus-Liebig-Universität Giessen, D-35392 Giessen, Germany — ²Institute of Ion Beam Physics and Materials Research, Forschungszentrum Rossendorf, P.O. Box 51 01 19, 01314 Dresden, Germany

Both nitrogen and arsenic are considered possible acceptors in order to achieve p-type conductivity in ZnO. Ion implantation provides an accurate and reproducable method to incorporate these dopants into ZnO crystals.

In the presented work, high quality ZnO thin films were grown homoepitaxially on ZnO single crystals via a chemical vapour deposition process and were subsequently implanted with either ¹⁴N or ⁷⁵As ions, using implantation doses of 10¹⁶ atoms/cm². The films were annealed at temperatures of up to 1100^∘C. Dynamic SIMS measurements show the evolution of the implanted ions in the films and the corresponding motion of residual impurities. In addition, photoluminescence and hall effect measurements were performed to investigate the optical and electrical properties of the as-grown and the annealed samples.