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HL: Fachverband Halbleiterphysik
HL 45: ZnO II
HL 45.11: Talk
Thursday, March 29, 2007, 16:45–17:00, H17
Annealing Studies on N and As implanted Zinc Oxide — •Niklas Volbers1, Stefan Lautenschläger1, Joachim Sann1, Kay Potzger2, and Bruno K. Meyer1 — 1I. Physikalisches Institut, Heinrich-Buff-Ring 16, Justus-Liebig-Universität Giessen, D-35392 Giessen, Germany — 2Institute of Ion Beam Physics and Materials Research, Forschungszentrum Rossendorf, P.O. Box 51 01 19, 01314 Dresden, Germany
Both nitrogen and arsenic are considered possible acceptors in order to achieve p-type conductivity in ZnO. Ion implantation provides an accurate and reproducable method to incorporate these dopants into ZnO crystals.
In the presented work, high quality ZnO thin films were grown homoepitaxially on ZnO single crystals via a chemical vapour deposition process and were subsequently implanted with either 14N or 75As ions, using implantation doses of 1016 atoms/cm2. The films were annealed at temperatures of up to 1100∘C. Dynamic SIMS measurements show the evolution of the implanted ions in the films and the corresponding motion of residual impurities. In addition, photoluminescence and hall effect measurements were performed to investigate the optical and electrical properties of the as-grown and the annealed samples.