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HL: Fachverband Halbleiterphysik

HL 45: ZnO II

HL 45.8: Vortrag

Donnerstag, 29. März 2007, 16:00–16:15, H17

Homoepitaxial growth of ZnO thin film by pulsed laser deposition (PLD) — •Matthias Brandt, Holger von Wenckstern, Christian Hanisch, Holger Hochmuth, Michael Lorenz, Heidemarie Schmidt, and Marius Grundmann — Universität Leipzig, Semiconductor Physics Group, Institut für ExperimentellePhysik II, Leipzig, Germany

In this work ZnO thin films have been deposited homoepitaxially by PLD on ZnO single crystals grown by the hydrothermal method (purchased from CrysTec GmbH). These wafers have first been investigated by atomic force microscopy (AFM) and were found to show significant surface roughness in the as-received state. Therefore a thermal annealing method has been applied to the wafers prior to thin film growth, in order to improve the surface properties. An overview of the changes during annealing will be presented along with information on the optimal conditions for thermal annealing. Structural, morphological, optical and electrical properties of the thin films grown homoepitaxially on these optimized wafers will be discussed with respect to the growth conditions. Comparisons to properties of thin films grown heteroepitaxially on sapphire (Al₂O₃) and SCAM (ScAlMgO₄) will be provided.