Regensburg 2007 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 46: Poster 2
HL 46.19: Poster
Donnerstag, 29. März 2007, 15:00–17:30, Poster A
Energy transfer between N-related localized states in GaP1−xNx — •Tobias Niebling1, Wolfram Heimbrodt1, Bernardette Kunnert1, Kerstin Volz1, Wolfgang Stolz1, Peter Jens Klar2, and John Franz Geisz3 — 1Fachbereich Physik und Wissenschaftliches Zentrum für Materialwissenschaften, Philipps-Universität, Renthof 5, D-35032 Marburg, Germany — 2I. Physikalisches Institut, Justus-Liebig-Universität, Heinrich-Buff-Ring 16, D-35392 Gießen, Germany — 3National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, Colorado 80401, USA
Time-resolved photoluminescence results of a series of GaP1−xNx samples with x up to 0.02 will be presented. The temperature dependence, the concentration dependence as well as the temporal behavior indicate that the photoluminescence is dominated by excitation transfer processes between the various localized N-related states, such as the isolated N-impurity, various N-pair states and higher N-clusters. The excitation transfer processes in conjunction with the concentration-dependent statistics of the various N-related states alone are sufficient to explain the observed red-shift of the luminescence of GaP1−xNx with increasing x as well as the spectral dependence of the PL decay times. However, this implies that the photoluminescence data alone do not give any conclusive evidence that a transformation from an indirect to a direct-gap semiconductor takes place in Ga(N,P) with increasing N up to 2% as often stated.