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HL: Fachverband Halbleiterphysik

HL 46: Poster 2

HL 46.21: Poster

Donnerstag, 29. März 2007, 15:00–17:30, Poster A

Optical Spectroscopy on Ga(N,As,P)/GaP QW structures for III-V lasers on Si substrates — •Christian Karcher¹, Gunnar Blume¹, Peter Jens Klar², Bernardette Kunert¹, Stefan Oberhoff¹, Kerstin Volz¹, Wolfgang Stolz¹, and Wolfram Heimbrodt¹ — ¹Dept. Physics and WZMW, Philipps-University of Marburg, Germany — ²1. Physics Institute Justus Liebig University of Giessen, Germany

Recently lasing was achieved at 280K in GaP based laser structures employing highly strained Ga(N,As) and Ga(N,As,P) single quantum wells in between GaP barriers in the active region. The laser structures have been grown on (100) GaP substrates. This opens actually the field for achieving III-V lasers on Si substrate as the lattice-mismatch between GaP and Si is small. We studied those laser structures and related multiple quantum well structures of different well width and with varying well composition by photoluminescence, photomodulated reflectance, electroreflectance, and high-pressure experiments. The obtained spectra will be discussed and analysed in order to determine fundamental electronic properties like e.g. the band alignment as function of strain and composition. These results are essential for improving the performance of room-temperature laser structures grown on silicon.