Regensburg 2007 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 46: Poster 2
HL 46.26: Poster
Thursday, March 29, 2007, 15:00–17:30, Poster A
MOVPE-Growth of GaN-nanowires on various III-V-Substrates — •M. Shirnow1, V. Gottschalch1, J. Bauer1, H. Paetzelt1, G. Wagner2, and J. Lenzner3 — 1Institut für Anorganische Chemie, Universität Leipzig, Johannisallee 29, D-04103 Leipzig — 2Institut für Mineralogie, Kristallographie und Materialwissenschaften, Universität Leipzig, Linnéstr. 3, D-04103 Leipzig — 3Institut für Experimentelle Physik II, Universität Leipzig, Linnéstr. 3, D-04103 Leipzig
GaN nanoscale structures (nanowires) have great potential for realizing new optoelectronic devices. We compare the growth of freestanding GaN wires on various substrates and templates using two precursor combinations; 1.1-Dimethylhydrazine (DMHy)/Trimethylgallium (TMGa) and NH3/Triethylgallium (TEGa). The precursor combination DMHy/TMGa was used for the growth of GaN at low substrate temperatures. By variation of the growth temperature and partial pressure (DMHy/TMGa) a small range of anisotropic growth was found, where cubic GaN wires can grow directly on GaAs substrates. GaN wires deposited on an intermediate BP layer above 750∘C show the Wurtzite structure. We grew GaN wires on (0001) and (10-12) Al2O3 surfaces using the precursors TEGa and NH3 and N2 as the carrier gas in a temperature range from 900 to 1000∘C. We used Ni and Au as initiators for vapour-liquid-solid (VLS) wire growth.