DPG Phi
Verhandlungen
Verhandlungen
DPG

Regensburg 2007 – scientific programme

Parts | Days | Selection | Search | Downloads | Help

HL: Fachverband Halbleiterphysik

HL 46: Poster 2

HL 46.27: Poster

Thursday, March 29, 2007, 15:00–17:30, Poster A

VLS Growth of III-V compounds — •A. Vogel1, V. Gottschalch1, J. Bauer1, G. Wagner2, M. Shirnow1, H. Paetzelt1, J. Lenzner3, and W. Schmitz21Institut für Anorganische Chemie, Universität Leipzig, Johannisallee 29, D-04103 Leipzig — 2Institut für Mineralogie, Kristallographie und Materialwissenschaften, Universität Leipzig, Linnéstr. 3, D-04103 Leipzig — 3Institut für Experimentelle Physik II, Universität Leipzig, Linnéstr. 3, D-04103 Leipzig

The vapour-liquid-solid (VLS) growth method is well-established in fabrication of freestanding III-V-nanowires using metal-organic vapour-phase epitaxy. Some aspects of VLS growth are not yet well understood. The crystalline structure as well as the chemical composition of the catalyst may have great influence on the structure of the grown one-dimensional nanostructures. For this reason we deposited thin gold films varying from 6 to 26 nanometres on GaAs (-1-1-1), c-plane and r-plane sapphire and Si (111). Those films were analyzed using a texture goniometer, atomic force microscopy, transmission electron microscopy, conventional and temperature-sensitive X-ray diffraction offering the opportunity to capture in-situ scans up to 900C. We discuss the observed possible interactions between substrate, gold and precursor material. The stages of nanowire growth are discussed in detail.

100% | Mobile Layout | Deutsche Version | Contact/Imprint/Privacy
DPG-Physik > DPG-Verhandlungen > 2007 > Regensburg