Regensburg 2007 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 46: Poster 2

HL 46.33: Poster

Thursday, March 29, 2007, 15:00–17:30, Poster A

Optical and structural properties of MOVPE grown InGaN films with varying indium content — •Joachim Stellmach, Martin Leyer, Massimo Drago, Markus Pristovsek, and Michael Kneissl — Technische Universität Berlin, Institut für Festkörperphysik, Hardenbergstr. 36, Germany

High indium containing InGaN films and quantum wells are of great interest for a number of device applications, laser diodes and LEDs with emission in the particular blue and green wavelength range and beyond. We have systematically studied the temperature dependence of indium incorporation into thick InGaN layers.

The layer were grown on a GaN/sapphire templates with metal-organic vapour phase epitaxy (MOVPE). In order to alter the indium incorporation the growth temperature was varied between 650^∘C and 850^∘C. Dependent on the growth temperature the indium content varied between 1,5% – 43%. The layers were analyzed with x-ray diffraction (XRD), atomic force microscopy (AFM), photoluminescence (PL) and transmission spectroscopy.

We observed the lowest indium incorporation at a temperature of 850^∘C and an increase of the indium content and surface roughness with decreasing temperature. The XRD measurements showed a double peak structure for the sample grown at 750^∘C, possibly indicating the onset of phase separation in the InGaN films under these growth conditions.