Regensburg 2007 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 46: Poster 2
HL 46.35: Poster
Thursday, March 29, 2007, 15:00–17:30, Poster A
MOMBE epitaxial growth of InN on (0001) Sapphire GaN template or LT InN layer — •Jörg Hisek1, Uwe Rossow2, Heiko Bremers2, Daniel Fuhrmann2, Jochen Aderhold3, Jürgen Graul1, and Andreas Hangleiter2 — 1LFI, Leibniz Universität Hannover, Schneiderberg 32, 30167 Hannover — 2Institut für Angewandte Physik, TU Braunschweig, Mendelssohnstr. 2, 38106 Braunschweig — 3Fraunhofer Wilhelm-Klauditz-Institut, Bienroder Weg 54 E, 38108 Braunschweig
To date the epitaxial growth of high quality InN is still a challenge. Investigations of structural properties require an exact understanding of a re-producible growth mechanism of the used fabrication method.
Epitaxial InN has been grown on c-plane sapphire by means of MOMBE. Herby the metalorganic vapour fluxes have been adjusted by pressure control applying a MFC calibration with nitrogen. A comparison was made between InN layers grown on templates with a thicker GaN buffer layer (grown by MOVPE) and InN grown directly onto pre-nucleated substrate. The latter method was split into the usage of GaN or InN as nucleation seeds. GaN buffer layer quality sets limitations if the InN is grown on top by an in-situ method. The optimisation of the seeding buffer layer is reported. The most crucial growth parameters found, are substrate temperature and the III/V flux ratio.
Studies by RHEED, HRXRD, AFM, SEM and PL evaluated the morphological and optical properties of the as-grown InN. The without templates grown InN was hexagonal and dominantly N-polar. Electrical measurements revealed high electron mobility.