Regensburg 2007 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 46: Poster 2
HL 46.41: Poster
Thursday, March 29, 2007, 15:00–17:30, Poster A
Optical characterization of acceptors implanted into ZnO — •Joachim Dürr1, Daniel Stichtenoth1, Sven Müller1, Carsten Ronning1, Lars Wischmeier2, Chegnui Bekeny2, and Tobias Voss2 — 1II. Institute of Physics, University of Göttingen, Friedrich-Hund-Platz 1, 37073 Göttingen, Germany — 2Institute for Solid State Physics, University of Bremen, Bibliothekstraße 1, 28359 Bremen, Germany
Nitrogen and phosphorus are the most promising candidates for p-type doping of ZnO. We doped ZnO bulk crystals using ion implantation because this technique offers several advantages compared to other growth methods, e.g. precise control of the lateral and vertical dopant concentration even beyond solubility limits. After implantation and annealing of the introduced defects we performed photoluminescence measurements in order to monitor the optical activation of the dopants. Temperature- and power-dependent measurements reveal that a new line appearing at 3.23 eV for the N-implanted samples is due to Donor-Acceptor-Pair (DAP) transitions. We investigated the dependence of this feature on co-implantation as well as on the implantation and annealing temperature. First experiments on phosphorus-implanted ZnO will also be presented.