Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe

HL: Fachverband Halbleiterphysik

HL 46: Poster 2

HL 46.43: Poster

Donnerstag, 29. März 2007, 15:00–17:30, Poster A

Simulation of capacitance - temperature measurements on ZnO Schottky diodes — •Matthias Schmidt, Holger von Wenckstern, Rainer Pickenhain, and Marius Grundmann — Universität Leipzig, Institut für Experimentelle Physik II, Halbleiterphysik, Linnéstraße 5

We investigate theoretically and experimentally the temperature-dependent capacitance of ZnO Schottky diodes. For the experiments we used ZnO single crystals and epitaxial ZnO thin films grown by pulsed laser deposition. The capacitance was measured with an Agilent 4294A capacitance bridge at different temperatures (15K - 300K) and frequencies (5kHz - 1MHz). To explain the experimental results we use a model that considers the binding energy, the electron capture cross section and the concentration of the dominant donor.