Regensburg 2007 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 46: Poster 2
HL 46.44: Poster
Thursday, March 29, 2007, 15:00–17:30, Poster A
Electrical properties of ZnO nanorods and layers — •Eva Schlenker1, Thomas Weimann2, Peter Hinze2, Andrey Bakin1, Ole Peters1, Augustine Che Mofor1, Bianca Postels1, Hamid El-Shaer1, Hergo-Heinrich Wehmann1, and Andreas Waag1 — 1Institut für Halbleitertechnik, TU Braunschweig, Germany — 2Physikalisch-Technische Bundesanstalt (PTB), Braunschweig, Germany
ZnO has attracted a lot interest in the scientific community due to its outstanding properties. With a band gap of 3.37 eV and an exciton binding energy of 60 meV it is a promising candidate for micro- and optoelectronic applications. The growth of ZnO nanostructures and epitaxial layers is well under control and their optical and structural properties are already thoroughly characterized. However, due to contacting difficulties, less reports exist on the electrical properties of single ZnO nanostructures.
In this contribution we present various contacting methods in order to explore the electrical properties of individual nanorods either grown by aqueous chemical growth or vapor phase transport. Current-voltage characteristics were obtained by using an atomic force microscope (AFM) with a conductive tip or by patterning contacts with e-beam lithography. The results are compared to the ones obtained from measurements on epitaxially grown ZnO layers and first applications are presented.