Regensburg 2007 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 46: Poster 2

HL 46.48: Poster

Thursday, March 29, 2007, 15:00–17:30, Poster A

MBE growth of high mobility HgTe/HgCdTe heterostructures — •Christoph Brüne, Andreas Roth, Steffen Wiedmann, Joachim Schneider, Markus König, Charles Becker, Hartmut Buhmann, and Laurens Mohlenkamp — Physikalisches Institut, Lehrstuhl für Experimentelle Physik 3, Universität Würzburg, Am Hubland, 97074 Würzburg, Germany

Epitaxial grown HgTe/HgCdTe heterostructures became very interesting for electronic applications due to good electrical proberties and a very high Rashba spinorbit spin splitting effect. Up to now quantum well (QW) structures with carrier mobilities of some 10⁵ cm²/Vs at a rather high carrier concentration (>10¹² cm⁻²) were available. Our recent work has been focused on the fabrication of high mobility and low carrier density HgTe/HgCdTe single QW structures for magneto transport measurements. Single HgTe QWs with thicknesses between 5 and 12 nm are grown by molecular beam epitaxy (MBE) in between Hg_xCd_1−xTe barriers. Iodine doping was employed at a distance of 10 nm from the QW either on one or on both sides. Due to special investigations of the growth conditions mobilities up to 10⁶ cm²/Vs have been achieved for densities of a few 10¹¹ cm⁻². Simultaneously, Rashba splitting energies with ΔE_R >10 meV have been observed on gated Hallbar structures.