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HL: Fachverband Halbleiterphysik

HL 46: Poster 2

HL 46.49: Poster

Donnerstag, 29. März 2007, 15:00–17:30, Poster A

Lithographical nanostructure fabrication of high mobility HgTe quantum well structures — •Andreas Roth, Steffen Wiedmann, Joachim Schneider, Markus König, Christoph Brüne, Charles Becker, Hartmut Buhmann, and Laurens Molenkamp — Physikalisches Institut, Lehrstuhl für Experimentelle Physik 3, Universität Würzburg, Am Hubland, 97074 Würzburg, Germany

Large Rashba energies and high carrier mobilities make HgTe quantum wells structures an interesting material for spintronics applications. However, standard nano fabrication processes can not easily be adapted for HgTe materials due to the low growth temperature. Here, we present a method for nanostructure fabrication using dry etching techniques. It turned out that dry etched samples exhibit superior transport properties compared to wet etched structures with an improved control of the structural dimensions. Thus, for the first time, it was possible to investigate side wall depletion effects in HgTe quantum wells structures, with lateral dimensions down to 100 nm.