Regensburg 2007 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe

HL: Fachverband Halbleiterphysik

HL 46: Poster 2

HL 46.55: Poster

Donnerstag, 29. März 2007, 15:00–17:30, Poster A

Growth of smooth ZnO layers by a modified CVD process — •Anton Reiser¹, Andreas Ladenburger¹, Günther M. Prinz¹, Martin Schirra¹, Uwe Röder¹, Martin Feneberg¹, Johannes Biskupek², Ute Kaiser², Klaus Thonke¹, and Rolf Sauer¹ — ¹Institut für Halbleiterphysik, Universität Ulm, D-89069 Ulm — ²Zentrale Einrichtung Elektronenmikroskopie, Materialwissenschaftliche Elektronenmikroskopie, Universität Ulm, D-89069 Ulm

We grow ZnO layers by a modified CVD process on different substrate materials with growth rates of several micrometers per hour. This process is performed in a simple quartz liner tube at temperatures between 700 and 850 °C at normal pressure, using ZnO powder as source material. The growth can be controlled by the presence of seeding metal particles, allowing the definition of lateral structures. Growth also proceeds without catalyst particles, when a nucleation layer is deposited. The best results for heteroepitaxy are obtained on GaN films grown by MOVPE on c-plane sapphire substrates. In XRD measurements, Θ/2Θ scans exhibit smaller halfwidth of the diffraction peaks for the ZnO single crystal layers than for the GaN templates. TEM images show that the interfaces between ZnO and GaN are atomically flat. For GaN substrates, the optical quality of the ZnO layers is excellent in terms of photoluminescence intensity and halfwidth of the dominant donor bound exciton lines.