Regensburg 2007 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 46: Poster 2

HL 46.6: Poster

Donnerstag, 29. März 2007, 15:00–17:30, Poster A

Phosphorus-doped silicon under uniaxial tensile strain — •Nicole Santen and Reiner Vianden — HISKP Universität Bonn, Nußallee 14-16, D-53115 Bonn

The recent application of strained silicon into transistor design has led to significant progress in increasing the performance of devices. However, up to now, little is known about the mechanical behaviour of the strained Si layers and the elastic properties of the deformed semiconductor lattice. The perturbed angular correlation method is ideally suited to study strain related local phenomena in silicon using the acceptor ¹¹¹In as probe.

In the past, the influence of external uniaxial strain on In acceptors in pure Si and on donor-acceptor pairs in silicon has been investigated intensively. In the course of these studies it was found that the unpaired indium probes on regular lattice sites showed an unexpected reaction to uniaxial strain, which depended on the dopant species. In our current experiments, a strain induced EFG in P-doped silicon has been observed for the first time. In addition, it was found that the reaction of the P-doped silicon lattice to tensile strain applied along different crystal axes showed strong differences.