Regensburg 2007 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 46: Poster 2

HL 46.61: Poster

Thursday, March 29, 2007, 15:00–17:30, Poster A

Chlorine in epitaxially grown ZnO — •Felizitas Eylert, Swen Graubner, Stefan Lautenschläger, Christian Neumann, Joachim Sann, Niklas Volbers, and Bruno Meyer — 1. Physikalisches Institut, Justus-Liebig-Universität Gießen

The group-III elements Al, Ga and In introduce shallow donor states into ZnO and are widely used for obtained high free carrier concentrations up to the metallic limit. Much less is known from the group-VII elements, F, Cl and Br. There exists experimental evidence that at least Cl is indeed a shallow donor and produces high n-type conduction when in the CVD growth zinc chloride is used as a precursor. However, solid precursors are difficult to control in the CVD growth. It was therefore, our interest to use gaseous components. We, therefore, grew ZnO layers on GaN templates and ZnO substrates with CH3Cl as precursor for chlorine. We will report on the structural, optical and electrical properties of those films.