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HL: Fachverband Halbleiterphysik

HL 46: Poster 2

HL 46.62: Poster

Donnerstag, 29. März 2007, 15:00–17:30, Poster A

Structural and electrical investigation of fluorine doped ZnSe — •Marina Panfilova, Alexander Pawlis, Christof Arens, Detlef Schikora, and Klaus Lischka — Universität Paderborn, Department Physik, Warburger Str. 100, 33095 Paderborn

Fluorine doped ZnSe is a promising material for the realization of practical quantum information technology due to the potential of excitons bound to individual fluorine donors with a pure nuclear spin of 1/2. Exploitation of this in a single-photon source requires knowledge of the properties of the fluorine donor in ZnSe. Capacitance-Voltage and Hall-Effect have been measured to estimate the fluorine donor concentration and the carrier background concentration in ZnSe layers. Several ZnSe:F samples were grown by molecular beam epitaxy using various fluxes of fluorine. The fluorine donor concentration is found to increase with increasing fluorine source temperature. The carrier background concentration was established in the order of 10¹⁵ cm⁻³. For the isolation of individual F-atoms different etching techniques were used to fabricate micro-discs and mesa structures with diameter between 10 and 1 µm. Surface and edge morphologies were investigated by atomic force microscopy and scanning electron microscopy. The optical properties of few and individual F-atoms inside mesa and micro-disc structures were measured. Deterministic photon emission from individual F-Donor bound excitons was observed.