Regensburg 2007 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 46: Poster 2

HL 46.67: Poster

Thursday, March 29, 2007, 15:00–17:30, Poster A

Effect of doping on the band structure in Spin-LED devices — •N. Höpcke, W. Löffler, C. Sailer, J. Lupaca-Schomber, S. Li, T. Passow, C. Klingshirn, M. Hetterich, and H. Kalt — Institut für Angewandte Physik and DFG Center for Functional Nanostructures (CFN), Universität Karlsruhe (TH), 76128 Karlsruhe, Germany

We develop p-i-n diode structures to initialize and detect the electron spin for investigations on spin dynamics. The spins are aligned in the diluted magnetic semiconductor ZnMnSe. In an InGaAs/GaAs quantum-dot layer the recombination of electrons and holes takes place and the polarization of the emitted light is a direct proof of the electron spin state. Here, we investigate the effect of the doping concentration in the ZnMnSe layer on the bandstructure and thereby on the spin polarization. Decreasing the doping concentration leads to higher polarization at low fields and avoids charging of the quantum dots.