Regensburg 2007 – scientific programme
Parts | Days | Selection | Search | Downloads | Help
HL: Fachverband Halbleiterphysik
HL 46: Poster 2
HL 46.69: Poster
Thursday, March 29, 2007, 15:00–17:30, Poster A
Magnetic bipolar heterojunction based on Ga(Mn)As — •Heigl Stefan, Ursula Wurstbauer, Dieter Schuh, and Werner Wegscheider — Universität Regensburg, Institut für Experimentelle und Angewandte Physik, D-93040 Regensburg
We report on the results of transport measurements on magnetic bipolar GaMnAs heterostructures grown by molecular beam epitaxy. Devices based on spin-polarized bipolar transport employing GaMnAs layers were already proposed by Fabian et al. [1]. We have fabricated GaAs based pn-heterojunctions using silicon for n-type doping, carbon for non magnetic p-type doping and manganese for magnetic pmag -type doping. In a first growth step we deposited a 1 µm thick highly doped n- or p- type GaAs layer on semi insulating (001) GaAs. After ex-situ cleaving the substrate, we have overgrown the (110) cleavage plane with a complementary doped (p-, pmag- or n-type) thin GaAs layer. These devices show the typical I-V characteristic known for pn-junctions. If Mn is used as a dopant, additional features for this magnetic pn-junction appear in the I-V curves when a magnetic field is applied. We acknowledge the support of this work by the DFG via SFB 689 Spinphänomene in reduzierten Dimensionen. [1] I. Zutic, J. Fabian, and S. Das Sarma, Rev. Mod. Phys. 76, 323 (2004)