Regensburg 2007 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 46: Poster 2
HL 46.77: Poster
Thursday, March 29, 2007, 15:00–17:30, Poster A
Scanning capacitance microscopy measurements on Si epilayers — •C. Henkel1, H. Schmidt1, C. Sturm1, M. Grundmann1, A. Krtschil2, A. Krost2, P. Pelzing3, and A. Möller3 — 1Universität Leipzig, Fakultät für Physik und Geowissenschaften, EXPII, Germany — 2Otto-von-Guericke-Unversität Magdeburg, Institut für Experimentelle Physik, Germany — 3SGS Institut Fresenius GmbH, 01109 Dresden, Germany
We address the issue of extracting active dopant profile information from scanning capacitance microscopy (SCM) measurements because the direct imaging of dopant distribution and electrically active defects on the nanometer scale is one of the important issues facing semiconductor industry today. The samples are cross sections of differently doped Si epilayers on Si substrates with a native oxide layer as the insulating surface layer in the local metal-oxide semiconductor (MOS) structure. The SCM measurements have been performed at different biases ranging from -3 V to +3 V using a Dimension 3100 from Veeco Instruments. Before probing SCM at systematically increased bias voltages starting from -3V, the conducting tip has been shortly biased by 3V/0V in order to reach equilibrium conditions.We used a realistic one-dimensional MOS model taking into account high frequency effects, contact resistance and a surface layer capacitance to simulate dC/dV-V characteristics measured on the Si epilayers. Finally, by converting the measured SCM data into doping profiles, we demonstrate the capability of the SCM technique for extracting the free charge carrier concentration.