Regensburg 2007 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 46: Poster 2

HL 46.9: Poster

Donnerstag, 29. März 2007, 15:00–17:30, Poster A

PL characteristics of site-controlled InGaN nanostructures — •Theodoros Tsifotidis, Michael Jetter, and Peter Michler — Institut für Strahlenphysik, Universität Stuttgart, Allmandring 3, 70569 Stuttgart, Germany

InGaN emits in dependence on the Indium concentration light in the blue-green spectral range. The tendency for developing structures in the Stranski-Krastanov growth mode to realise QDs in this material system is quite weak. One possible solution can be a selective growth of GaN/InGaN nanostructures by MOVPE. To realise this a new masking method was applied by using small sized microspheres to produce a capable aperture mask. SEM measurements confirmed hexagonal grown micropyramids at the selected positions. CL measurements on them showed low emission energies in the region of their edges and dots caused by different Indium compositions on the surface. By varying the growth parameters one can influence the Indium distribution on the various surfaces. To deduce capable growth parameters we examined several samples fabricated with varied Indium flow, growth time and growth temperature. Time-integrated and time-resolved ensemble- and *-PL measurements were performed. Additionaly temperature and excitation power dependent experiments were done. This gave us informations about charge carrier dynamics and subsequent the dynamics of Indium composition during the growth process.