Regensburg 2007 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 48: Quantum dots and wires: preparation and characterization II

HL 48.3: Talk

Thursday, March 29, 2007, 16:45–17:00, H13

Growth condition dependence of MOVPE InGaN quantum dots — •Christian Tessarek, Tomohiro Yamaguchi, Jens Dennemarck, Stephan Figge, and Detlef Hommel — Universität Bremen, Otto-Hahn-Allee 1, 28359 Bremen

InGaN is a very interesting material for optical application due to the blue-green emission. The implementation of InGaN quantum dots into the active region promises an improvement in optical behavior as well as in device performance. The conventional growth method to a strain driven formation of quantum dots is the Stranski-Krastanov growth mode. The problem is the capping process, which causes a dissolution of the dots. We develop a novel two-step growth method. A first In(x)Ga(1-x)N nucleation layer is stabilized by a second In(y)Ga(1-y)N formation layer with different indium compositions (y<x) in the two-step growth method. The existence of quantum dots is confirmed by micro-PL-measurements for this structure [1]. The influence of nucleation layer growth parameters like temperature, (TM)In-flux and thickness is further investigated with PL-measurements. XRD-results will show strain relaxation due to increasing number of stacking layer. First EL-results will be also presented for the implementation of quantum dots into LED device structure. [1] K. Sebald, H. Lohmeyer, J. Gutowski, T. Yamaguchi and D. Hommel, phys. stat. sol. (c) 243, 1661-1664 (2006)