Regensburg 2007 – scientific programme
Parts | Days | Selection | Search | Downloads | Help
HL: Fachverband Halbleiterphysik
HL 5: Photovoltaic
HL 5.4: Talk
Monday, March 26, 2007, 11:45–12:00, H14
Interface Condition during Oscillatory Behavior of Silicon Photoelectrodes Investigated by Brewster Angle Reflectometry — •Michael Lublow and Hans Joachim Lewerenz — Hahn-Meitner-Institut Berlin, Abt. SE5, Glienicker Str. 100, 14109 Berlin
In-situ Brewster angle reflectometry was employed during anodic current oscillations of silicon electrodes in HF containing solutions. At selected points of the oscillation cycles, surface and interface topographies were investigated by Atomic Force Microscopy. The morphology of the anodic oxide was found to be built of regular cone shaped rods with uniform lateral diameter (80-120 nm) depending upon the oscillation state. In order to uncover the silicon oxide / silicon interface carefully, Brewster angle analysis was used during successive etch steps of the sample in 40% NH4F. Thus, the change in film thickness of the anodic oxide as well as the variation of the roughened interfaces could be accurately quantified. It can be shown that the silicon interface is characterized by a transitory behavior from statistically rough to self-organized topographies.