Regensburg 2007 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 51: GaN: preparation and characterization

HL 51.6: Talk

Friday, March 30, 2007, 12:15–12:30, H13

Optical Properties of Si- and Mg-Doped GaN Nanorods — •Florian Furtmayr, Martin Vielemeyer, Martin Stutzmann, and Martin Eickhoff — Walter Schottky Institut, Technische Universität München, Am Coulombwall 3, D-85748 Garching

Quasi one-dimensional semiconductor single crystals are a key component for future applications in nano-electronics and nano-optics. Using a catalyst free growth technique, GaN-nanorods were fabricated by plasma assisted molecular beam epitaxy on Si(111) substrates. Both Si- and Mg-doping over a wide concentration range was realized and the influence of doping on the growth kinetics has been investigated. In addition, the optical properties were studied by photoluminescence spectroscopy in the temperature range 4K to 100K. Emission from free and donor bound excitons are the dominant effects for undoped samples, whereas the contribution of donor-acceptor recombination increases for increasing doping concentrations. The relation between luminescence characteristics, nanorod geometry, degree of coalescence, and doping concentration is analyzed.