Regensburg 2007 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 51: GaN: preparation and characterization

HL 51.9: Vortrag

Freitag, 30. März 2007, 13:00–13:15, H13

MOVPE growth and characterization of Cr-doped GaN — •Yong Suk Cho¹, Nicoleta Kaluza¹, Hilde Hardtdegen¹, Thomas Schaepers¹, Vitaliy Guzenko¹, Klaus Schmalbuch², Bernd Beschoten², Uwe Breuer³, Astrid Besmehn³, Hans-Peter Bochem¹, and Hans Lueth¹ — ¹Institute of Bio- and Nanosystems (IBN-1), Center of Nanoelectronic Systems for Information Technology (CNI), Virtual Institute of Spin Electronics (VISel), Research Center Juelich, 52425 Juelich, Germany — ²II. Physikalisches Institute and Virtual Institute of Spin Electronics (VISel), RWTH Aachen, 52056 Aachen, Germany — ³Central Division of Analytical Chemistry (ZCH), Research Center Juelich, 52425 Juelich, Germany

We grew Cr-doped GaN by metal organic vapor phase epitaxy on undoped GaN epilayers. Conventional Ga and N precursors were used and bis(cylcopentadienyl)chromium (Cp₂Cr) was employd as the Cr precursor. We investigated the effects of growth temperature, carrier gas and Cr/Ga source ratio on the Cr incorporation efficiency and on the morphological and magnetic properties of the layers. The concentration of Cr is linearly dependent on source partial pressure. The growth temperature mainly determines morphology and Cr incorporation efficiency in the layer. A certain amount of H₂ in carrier gas helps to make a coalesced surface. Our Cr-doped GaN grown by MOVPE shows remanent magnetization even above room tempeature.