 |
11:00 |
HL 51.1 |
GaN-based devices on 150 mm Si(001) substrate grown by MOVPE — •F. Schulze, A. Dadgar, A. Krtschil, O. Kisel, T. Hempel, J. Bläsing, C. Hums, A. Diez, L. Reißmann, J. Christen, and A. Krost
|
|
|
|
11:15 |
HL 51.2 |
Nachweis der spontanen Polarisation in GaN mittels UHV-Kathodolumineszenz — •Martina Finke, Daniel Fuhrmann, Uwe Rossow und Andreas Hangleiter
|
|
|
|
11:30 |
HL 51.3 |
Vertically increasing well thickness and In content in GaInN MQWs due to V-shaped pits — •Heiko Bremers, Lars Hoffmann, Daniel Fuhrmann, Holger Jönen, Uwe Rossow, and Andreas Hangleiter
|
|
|
|
11:45 |
HL 51.4 |
Luminescence properties of high quality non-polar a-plane GaN epilayers — •Martin Noltemeyer, Barbara Bastek, Lars Reißmann, Frank Bertram, Alexander Franke, Jürgen Christen, Matthias Wieneke, Armin Dadgar, and Alois Krost
|
|
|
|
12:00 |
HL 51.5 |
Nonlinear elastic effects in group III-nitrides — •Michal Petrov, Liverios Lymperakis, and Jörg Neugebauer
|
|
|
|
12:15 |
HL 51.6 |
Optical Properties of Si- and Mg-Doped GaN Nanorods — •Florian Furtmayr, Martin Vielemeyer, Martin Stutzmann, and Martin Eickhoff
|
|
|
|
12:30 |
HL 51.7 |
Band gap and Van-Hove singularities of cubic InN — •Pascal Schley, Rüdiger Goldhahn, Christian Napierala, Gerhard Gobsch, Jörg Schörmann, Donat J. As, Klaus Lischka, Frank Fuchs, and Friedhelm Bechstedt
|
|
|
|
12:45 |
HL 51.8 |
Nonpolar a-plane GaN grown on r-plane sapphire by metal-organic vapor-phase epitaxy — •Matthias Wieneke, Armin Dadgar, Jürgen Bläsing, Andre Krtschil, Thomas Hempel, and Alois Krost
|
|
|
|
13:00 |
HL 51.9 |
MOVPE growth and characterization of Cr-doped GaN — •Yong Suk Cho, Nicoleta Kaluza, Hilde Hardtdegen, Thomas Schaepers, Vitaliy Guzenko, Klaus Schmalbuch, Bernd Beschoten, Uwe Breuer, Astrid Besmehn, Hans-Peter Bochem, and Hans Lueth
|
|
|
|
13:15 |
HL 51.10 |
Piezoelectric Fields in Semipolar GaInN/GaN Quantum Wells — •Martin Feneberg, Frank Lipski, Klaus Thonke, Rolf Sauer, Thomas Wunderer, Peter Brückner, and Ferdinand Scholz
|
|
|
