Regensburg 2007 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 6: Quantum dots and wires: preparation and characterization I

HL 6.4: Talk

Monday, March 26, 2007, 11:45–12:00, H15

positioning of self-assembled InAs quantum dots by focused ion beam implantation — •minisha mehta, dirk reuter, alexander melnikov, and andreas d. wieck — Lehrstuhl für Angewandte Festkörperphysik, Ruhr-Universität Bochum, Universitätstraße 150, D-44780, Bochum

We present results on the positioning of InAs quantum dots (QDs) by a combined focused ion beam (FIB) and molecular beam epitaxy (MBE) process. First, a layer of GaAs was grown by MBE before a square lattice of holes was fabricated by FIB implantation. Thereafter, before overgrowth with InAs an in-situ annealing step was performed. The QDs were preferentially formed in the holes generated by FIB implantation. We have studied the influence of ion dose, the annealing parameters and the In amount. With an optimized process one can achieve one QD per hole without QDs between the holes. Photoluminescence studies on GaAs-capped QDs confirmed the optical quality of the QDs.

Financial support by GRK384 and the BMBF via the NanoQuit program is gratefully acknowledged.