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11:00 |
HL 7.1 |
Strain properties of AlN layers grown on different substrates — •Ronny Kirste, Ute Haboeck, Axel Hoffmann, Christian Thomsen, Barbara Bastek, Frank Bertram, Jürgen Christen, Armin Dadgar, and Alois Krost
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11:15 |
HL 7.2 |
Optical Spectroscopy of doped and undoped Aluminium Nitride Layers on Sapphire Substrates — •Günther M. Prinz, Martin Schirra, Martin Feneberg, Sarad B. Thapa, Matthias Bickermann, Boris Epelbaum, Ferdinand Scholz, Rolf Sauer, and Klaus Thonke
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11:30 |
HL 7.3 |
Spinoidal decomposition in GaN:Mn grown by MBE — •Dong-Du Mai, Tore Niermann, Martin Roever, Jan Zenneck, Henning Schuhmann, Amilcar Bedoya Pinto, Joerg Malindretos, Michael Seibt, and Angela Rizzi
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11:45 |
HL 7.4 |
In-N anti-correlation in InGaAsN alloys: the delicate interplay between adatom thermodynamics and kinetics — •Hazem Abu-Farsakh and Jörg Neugebauer
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12:00 |
HL 7.5 |
MOCVD Prozessentwicklung und Charakterisierung von AlIn/GaN-HEMT-Strukturen — Steffen Weller, Christoph Giesen, Lars Rahimzadeh-Khoshroo, Michael Fieger, Martin Eichelkamp, Holger Kalisch, Andrei Vescan, Rolf Jansen und •Michael Heuken
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12:15 |
HL 7.6 |
MOVPE Wachstum und Charakterisierung von AlInN Schichten auf Si(111) — •C. Hums, A. Gadanecz, A. Dadgar, J. Bläsing, T. Hempel, A. Krtschil, A. Dietz, J. Christen und A. Krost
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12:30 |
HL 7.7 |
Thermal stability and structural properties of AlInN grown on Si(111) by metalorganic vapor phase epitaxy — •Aniko Gadanecz, Jürgen Bläsing, Armin Dadgar, Christoph Hums, Thomas Hempel, and Alois Krost
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12:45 |
HL 7.8 |
Comparison of the electronic band formation and band structure of GaNxAs1−x and GaNxP1−x — •Martin Güngerich, Wolfram Heimbrodt, Gerhard Weiser, Bernardette Kunert, Kerstin Volz, Peter Jens Klar, and John Franz Geisz
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