Regensburg 2007 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 9: Semiconductor Laser II
HL 9.3: Vortrag
Montag, 26. März 2007, 15:15–15:30, H13
Dynamic behavior of 1050nm semiconductor disk lasers — •Wolfgang Diehl1,3, Sangam Chatterjee2, Swantje Horst2, Kristian Hantke2, Wolfgang Rühle2, Michael Furitsch1, Stefan Illek1, Ines Pietzonka1, Johann Luft1, Wolfgang Stolz3, and Peter Brick1 — 1Osram Opto Semiconductors, Leibnizstr. 4, D-93055 Regensburg, Germany — 2Faculty of Physics and Material Science Center, Philipps-Universität Marburg, Renthof 5, D-33032 Marburg, Germany — 3Philipps-University Marburg, Hans Meerwein Str., D-35032 Marburg, Germany
We have investigated the lasing dynamics of semiconductor disk lasers emitting at 1050nm. Pulse durations of 500ns and 5000ns were used for excitation pump wavelength of 808nm for barrier pumping and 940nm for direct well pumping. Without resonator due to the high pump densities of up to 10kW/cm^2 high order transitions in the QW as well as band filling effects can be observed. With a resonator present, the photoluminescence overshoots and is subsequently clamped on a time scale of 40ns to 80ns depending on the pump power. This behavior can be explained with rate-equation modell using microscopically calculated gain and luminescence spectra.