Regensburg 2007 – wissenschaftliches Programm
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MA: Fachverband Magnetismus
MA 10: Spinelectronics/Spininjection in Heterostructures
MA 10.8: Vortrag
Montag, 26. März 2007, 17:00–17:15, H23
Magnetic and transport properties of embedded magnetic cells for a front-end-of-line MRAM design — •Thomas Uhrmann1, Theodoros Dimopoulos1, Christoph Stepper1, Ludwig Bär2, Uwe Paschen3, and Hubert Brückl1 — 1Austrian Research Centers GmbH - ARC, Nano System Technologies, Donau-City-Str. 1, 1220 Wien, Austria — 2Siemens AG, CT MM1, Paul-Gossen-Str. 100, 91052 Erlangen, Germany — 3Fraunhofer Gesellschaft, Finkenstrasse 61, 45057 Duisburg, Germany
A non-conventional, front-end MRAM design will be presented, based on spin-polarized current injection and detection by adjacent magnetic cells through the semiconductor. Magnetic cells of: tunnel barrier (MgO)/ ferromagnet (CoFe or CoFeB)/ capping, are sputtered on the properly doped Si, inside holes formed in SiO2 dielectric.
Here we will focus on the characterization of the embedded sub-µm Metal/ Insulator/ Semiconductor(MIS)-tunneling diodes dedicated for spin injection and detection. The magnetic properties of the cells were characterized by magneto-optical Kerr effect, combined with micro-magnetic simulations. The thermal stability of the multilayer was verified for annealing conditions up to 550∘C. Finally, we used temperature dependent current-voltage and capacitance-voltage measurements to study the electrical transport properties of isolated cells and injector-detector pairs. From these measurements we extract information regarding the quality of the tunnel barrier/silicon interface, which is crucial in order to attain high current spin polarization in silicon.
We acknowledge support from the EU project EMAC-Strep 017412.