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MA: Fachverband Magnetismus

MA 12: Spindependent Transport I

MA 12.9: Vortrag

Dienstag, 27. März 2007, 12:15–12:30, H22

Inverted spin polarization of Heusler alloys — •Andy Thomas¹, Dirk Meyners¹, Daniel Ebke¹, Ning-Ning Liu¹, Jan Schmalhorst¹, Guenter Reiss¹, and Andreas Huetten^1,2 — ¹Bielefeld University, Thin films and nanostructures, Germany — ²Research Center Karlsruhe, Institute for Nano-technology, Germany

We prepared magnetic tunnel junctions with different Heusler compound electrodes and investigated the transport properties of these devices. The most striking feature of these structures is the inversion of the tunnel magnetoresistance (TMR) effect at certain bias voltages.

We use this feature to present a magnetic logic concept that overcomes the limitations of field programmable logic arrays while having a 50% smaller unit cell then conventional TMR designs. To reach that the negative TMR effect is used as an additional degree of freedom. This might be possible in other spintronic devices.

Band structure calculations give the theoretic explanation of the negative TMR.