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MA: Fachverband Magnetismus
MA 15: Poster:ThinFilms(1-33),Transp.(34-49),ExchBias(50-56),
Spindynamics(57-70),Micro-nanostr.Mat.(71-82),
Particles/Clust.(83-88), Mag.Imag./Surface(89-96),
Spinelectronics(97-109), Theory/Micromag.(110-116),
Spinstruct/Phasetr.(117-128),Magn.Mat.(129-139),
Aniso.+Measuring(140-145), MolMag.(146-152),
MSMA(153-156)
MA 15.25: Poster
Dienstag, 27. März 2007, 15:00–19:00, Poster A
Thin magnetic Co-based films with perpendicular anisotropy — •Jens Brandenburg1,2, Volker Neu1, Ruben Hühne1, and Ludwig Schultz1 — 1Leibniz Institut für Festkörper- und Werkstoffforschung Dresden, Institut für Metallphysik — 2Max Planck Institut für Chemische Physik fester Stoffe
Epitaxial Cobalt films with high c-axis texture have been prepared by PLD either directly onto Al2O3(0001) single crystal substrates or with an intermediate Ruthenium buffer layer. The influence of the substrate temperature on texture and crystal growth was investigated by XRD. The crystal structure and epitaxial growth relation was studied by XRD, pole figure measurements and ‘reciprocal space mapping’. Detailed VSM analysis shows that the perpendicular anisotropy of highly textured Co films reaches the value reported for the magnetocrystalline anisotropy of Co bulk material. The preparation of very thin Co films (20 nm < t < 100 nm) gives the possibility to examine the stripe domain phase over a larger thickness range as was reported so far. The thickness dependence of the domain width of this periodic domain pattern was studied by magnetic force microscopy (MFM) and compared with different models of domain theory. Especially the discrepancies at smallest film thicknesses show that the system is in an intermediate state of in-plane and out-of-plane domains, which is not described by existing stripe domain models. The experiments are extended to materials with higher magnetocrystalline anisotropy. First results on Co80Pt20- and SmCo5-films show evidence for epitaxial growth of these compounds on Al2O3(0001) single crystal substrates.