Regensburg 2007 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe

MA: Fachverband Magnetismus

MA 15: Poster:ThinFilms(1-33),Transp.(34-49),ExchBias(50-56),
Spindynamics(57-70),Micro-nanostr.Mat.(71-82),
Particles/Clust.(83-88), Mag.Imag./Surface(89-96),
Spinelectronics(97-109), Theory/Micromag.(110-116),
Spinstruct/Phasetr.(117-128),Magn.Mat.(129-139),
Aniso.+Measuring(140-145), MolMag.(146-152),
MSMA(153-156)

MA 15.29: Poster

Dienstag, 27. März 2007, 15:00–19:00, Poster A

Micromagnetic analysis of magnetization reversal in nanolayers with competing anisotropies and applications to layers of dilute magnetic semiconductor materials — Andrei A. Leonov¹, Igor E. Dragunov^1,2, Ulrich K. Rößler², and •Alexei N. Bogdanov^1,2 — ¹Donetsk Institute for Physics and Technology — ²IFW Dresden

The interplay between intrinsic and surface/interface-induced magnetic anisotropies causes remarkable reorientation effects and strongly influences magnetization processes in nanomagnetic systems. We apply a phenomenological theory [1,2] to describe the field-driven reorientation in nanomagnets with cubic and uniaxial anisotropies. The equilibrium magnetization states are calculated as functions of the applied magnetic field for systems with misalignment between uniaxial and cubic easy axes. The magnetic phase diagrams classified through their topological features allow a detailed analysis of the magnetization processes in these system. Equilibrium parameters of multidomain structures have been derived as functions of applied field, the ratio between cubic and uniaxial anisotropy, and the field misalignment. The theory is applied to analyze switching processes and transformations of domain patterns for experimental observations on layers of dilute magnetic semiconductors as (Ga,Mn)As from the literature.

[1] U.K. Rößler, S.V. Bukhtiyarova, I.V. Zhikharev, A.N. Bogdanov, J. Magn. Magn. Mater. 290-291, 772 (2005). [2] I.E. Dragunov, S.V. Bukhtiyarova, I.V. Zhikharev, A.N. Bogdanov, U.K. Rößler, Phys. Solid State 48 1591 (2006).