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MA: Fachverband Magnetismus
MA 15: Poster:ThinFilms(1-33),Transp.(34-49),ExchBias(50-56),
Spindynamics(57-70),Micro-nanostr.Mat.(71-82),
Particles/Clust.(83-88), Mag.Imag./Surface(89-96),
Spinelectronics(97-109), Theory/Micromag.(110-116),
Spinstruct/Phasetr.(117-128),Magn.Mat.(129-139),
Aniso.+Measuring(140-145), MolMag.(146-152),
MSMA(153-156)
MA 15.39: Poster
Tuesday, March 27, 2007, 15:00–19:00, Poster A
AlZr tunnel barriers in magnetic tunnel junctions — •Andrea Niemeyer1, Andy Thomas1, Hubert Brückl2, and Günter Reiss1 — 1Bielefeld University, Thin Films & Nanostructures, Bielefeld, Germany — 2ARCS research GmbH, Nano System Technologies, Vienna, Austria
Magnetic tunnel junctions are due to various possible applications interesting for research and development. Different electrode and barrier materials were used for preparation. During the last ten years the most commonly used barrier material was aluminum oxide. AlZr compositions form a very homogenous and amorphous barrier which is important for a good quality tunneling barrier. This might as well lead to higher tunneling magneto resistance. CoFeB as an electrode material provides high tunneling magneto resistance, about 70% at room temperature with commonly used aluminum oxide. The combination of CoFeB and a Zr alloyed barrier promises even higher TMR amplitudes. The magnetoresistance was measured in dependence on the barrier thickness for several AlZr alloy compositions.