Regensburg 2007 – scientific programme
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MA: Fachverband Magnetismus
MA 15: Poster:ThinFilms(1-33),Transp.(34-49),ExchBias(50-56),
Spindynamics(57-70),Micro-nanostr.Mat.(71-82),
Particles/Clust.(83-88), Mag.Imag./Surface(89-96),
Spinelectronics(97-109), Theory/Micromag.(110-116),
Spinstruct/Phasetr.(117-128),Magn.Mat.(129-139),
Aniso.+Measuring(140-145), MolMag.(146-152),
MSMA(153-156)
MA 15.41: Poster
Tuesday, March 27, 2007, 15:00–19:00, Poster A
Analysis of the oscillatory tunnel magnetoresistance caused by antiferromagnetic Mn Layers — •Peter Bose1, Jürgen Henk2, and Ingrid Mertig1 — 1Martin-Luther-Universität Halle-Wittenberg, FB Physik, FG Theoretische Physik, D-06099 Halle (Saale), Germany — 2Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, D-06120 Halle (Saale), Germany
It is well-established that interfaces determine essentially the transport properties of spintronic systems [1]. However, the essence of this phenomenon is not clarified until now and is still a subject of lively debates. By considering the effect of well-defined magnetic interfaces, the present theoretical investigation provides additional arguments to this discussion.
The ballistic magnetoresistance of tunnel junctions that comprise Mn films is found to exhibit oscillations with increasing Mn-film thickness, as is investigated by means of first-principles electronic-structure and transport calculations. The period of two monolayers is directly related to the layer-wise antiferromagnetic structure of the Mn films, in particular to the alternating magnetization at the interfaces [2]. These findings substantiate unequivocally the effect of the electronic and magnetic structure of interfaces on the conductance of tunnel junctions.
[1] C. Heiliger, P. Zahn, B. Yu. Yavorsky and Ingrid Mertig, Phys. Rev. B 72, 180406 (2005)
[2] U. Schlickum, W. Wulfhekel, J. Henk, P. Bruno, and J. Kirschner, Phys. Rev. B 74, 054409 (2006)