Regensburg 2007 – scientific programme

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MA: Fachverband Magnetismus

MA 15: Poster:ThinFilms(1-33),Transp.(34-49),ExchBias(50-56),
Spindynamics(57-70),Micro-nanostr.Mat.(71-82),
Particles/Clust.(83-88), Mag.Imag./Surface(89-96),
Spinelectronics(97-109), Theory/Micromag.(110-116),
Spinstruct/Phasetr.(117-128),Magn.Mat.(129-139),
Aniso.+Measuring(140-145), MolMag.(146-152),
MSMA(153-156)

MA 15.43: Poster

Tuesday, March 27, 2007, 15:00–19:00, Poster A

Concept of a Metal Single-Electron Transistor as Spin-Valve Structure — •Markus Kasper, Saskia Fischer, and Ulrich Kunze — Werkstoffe und Nanoelektronik,Ruhr-Universität Bochum, D-44780 Bochum

The generation, manipulation and investigation of spin-polarized currents still need to be improved to make new spintronic components reality. In this contribution we present a concept for a metal single-electron transistor that exploits the combination of Coulomb Blockade and spin-dependent tunneling processes between ferromagnetic leads and a metallic quantum dot [1]. Spin-polarized electrons tunneling through the quantum dot will lead to a non-equilibrium spin accumulation, i.e. a finite polarization of the quantum dot spin. The state of the quantum dot spin is reflected in the transport characteristics of the device. This structure is probably feasible to provide new insights into the mechanisms of spin controlled electron transfer and might actually show new effects resulting from the interaction of both phenomena. We present preliminary results for a metal single-electron transistor with an aluminium quantum dot and tunneling barriers formed by plasma oxidation.

[1] J. König and J. Martinek, PRL 90, 166602 (2003)