Regensburg 2007 – scientific programme

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MA: Fachverband Magnetismus

MA 15: Poster:ThinFilms(1-33),Transp.(34-49),ExchBias(50-56),
Spindynamics(57-70),Micro-nanostr.Mat.(71-82),
Particles/Clust.(83-88), Mag.Imag./Surface(89-96),
Spinelectronics(97-109), Theory/Micromag.(110-116),
Spinstruct/Phasetr.(117-128),Magn.Mat.(129-139),
Aniso.+Measuring(140-145), MolMag.(146-152),
MSMA(153-156)

MA 15.46: Poster

Tuesday, March 27, 2007, 15:00–19:00, Poster A

Structural and electrical characterization of magnetic tunnel junctions with ultrathin MgO-barriers — •Gerrit Eilers, Tore Niermann, Michael Seibt, and Markus Münzenberg — IV. Phys. Inst., Universität Göttingen

Ultrathin barriers are necessary to provide sufficient high tunnel current densities, which are required for spin current induced switching experiments. For future MRAMs with high read and write performance a high room-temperature tunnelling magnetoresistance (TMR) is also necessary. The thinner the barrier, the more important become the interfaces between the ferromagnetic electrodes and the insulating barrier.

We have prepared magnetic tunnel junctions (MTJs) with trilayers of CoFeB/MgO/CoFeB by means of e-beam evaporation of stoichiometric MgO and magnetron sputtering CoFeB. After characterizing the transport properties (I/V characteristics, TMR) the structural analysis was made by cross-sectional TEM. Aim is to correlate structurel defects and quality of the interfaces with the transport properties.

In future experiments we are planning to integrate the MTJs into a strip line with a photoconductive switch in order to study the dynamics of spin current induced switching effect.

Research was funded by DFG, SFB 602