Regensburg 2007 – scientific programme

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MA: Fachverband Magnetismus

MA 15: Poster:ThinFilms(1-33),Transp.(34-49),ExchBias(50-56),
Spindynamics(57-70),Micro-nanostr.Mat.(71-82),
Particles/Clust.(83-88), Mag.Imag./Surface(89-96),
Spinelectronics(97-109), Theory/Micromag.(110-116),
Spinstruct/Phasetr.(117-128),Magn.Mat.(129-139),
Aniso.+Measuring(140-145), MolMag.(146-152),
MSMA(153-156)

MA 15.51: Poster

Tuesday, March 27, 2007, 15:00–19:00, Poster A

Influence of ion bombardment induced patterning of exchange bias in pinned artificial ferrimagnets on the interlayer exchange coupling — Volker Höink¹, •Jan Schmalhorst¹, Günter Reiss¹, Tanja Weis², Dieter Engel², and Arno Ehresmann² — ¹Thin Films and Nanostructures, Department of Physics, University of Bielefeld, P.O. Box 100131, D-33501 Bielefeld, Germany — ²Institute of Physics and Center for Interdisciplinary Nanostructure Science and Technology (CINSaT), Kassel University, Heinrich-Plett-Str.40, D-34132 Kassel, Germany

Artificial ferrimagnets (AFi) have many applications as, e.g., pinned reference electrodes in magnetic tunnel junctions. It is known that the application of ion bombardment induced magnetic patterning with He ions on a single layer reference electrode of magnetic tunnel junctions is possible. For some applications a combination of ion bombardment induced magnetic patterning and artificial ferrimagnets as a reference electrode is desirable. The effect of ion bombardment induced magnetic patterning on pinned artificial ferrimagnets with a Ru interlayer which is frequently used in magnetic tunnel junctions as well as pinned AFis with a Cu interlayer has been tested. Special attention has been given to the question whether the antiferromagnetic interlayer exchange coupling can withstand the ion dose necessary to turn the exchange bias.