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MA: Fachverband Magnetismus

MA 18: Spindependent Transport II

MA 18.2: Vortrag

Mittwoch, 28. März 2007, 15:30–15:45, H22

Calculations of electronic tunneling through perovskite barriers — •Daniel Wortmann and Stefan Blügel — Institut für Festkörperforschung, Forschungszentrum Jülich, Germany

Two different effects discussed recently draw a lot of attention to spin polarized tunneling: the experimental verification of the theoretically predicted large tunneling magneto-resistance effect in MgO based junctions and the suggestion to use more complex ferroelectric barrier materials in tunneljunctions. Using our all-electron, full-potential transport code based on the embedding Green function method we investigate electronic tunneling in multilayer systems containing transition metal oxides in the perovskite structure. In particular, we focus on the effect of details of the atomic structure, the lattice distortion and the orbital character at the Fermi-level on tunneling in SrRuO₃/SrTiO₃/SrRuO₃ tunneljunctions and the resulting spin-polarization of the current. We discuss the transferability of the symmetry selection effects in MgO barriers and the possible extension to ferroelectric junctions.