Regensburg 2007 – scientific programme

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MA: Fachverband Magnetismus

MA 22: FV intern Symposium: "Heusler Alloys"
Invited Talks Kübler/Yamamoto/Inomata/Silvia Picozzi

MA 22.7: Talk

Thursday, March 29, 2007, 12:45–13:00, H10

Heusler compounds implemented in magnetic tunnel junctions: basic properties and applications — •Jan Schmalhorst, Andy Thomas, Andreas Hütten, and Günter Reiss — Bielefeld University, Department of Physics, Thin Films and Nanostructures, P.O. Box 100131, 33501 Bielefeld, Germany

The implementation of half-metallic materials like Heusler compounds [1] in magnetic tunnel junctions for spintronic applications is of highest technological relevance [2]. The major challenge is the preparation of defect free thin Heusler compound films and high quality electrode - barrier interfaces. In this talk, we will compare transport as well as magnetic and chemical bulk and interface properties of tunnel junctions with Co2MnSi, Co2FeSi, Co2FeMnSi or CoMnSb electrodes and Al-O or Mg-O barrier. Especially, we will focus on the bias voltage dependent inversion of the tunnel magnetoresistance [3, 4], which can be utilized for programmable logic devices [5]. The author gratefully acknowledge financial support by DFG and EU and the opportunity to perform soft X-ray absorption spectroscopy at the Advanced Light Source, Berkeley, USA.

[1] R. A. de Groot et al., Phys. Rev. Lett. 50 (1983) 2024

[2] S.A. Wolf et al., Science 294 (2001) 1488

[3] D. Ebke, J. Schmalhorst et al., Appl. Phys. Lett. 89 (2006) 16250

[4] J. Schmalhorst et al., Phys. Rev. B, accepted

[5] A. Thomas et al., Appl. Phys. Lett. 89 (2006) 012502