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MA: Fachverband Magnetismus

MA 24: Spindynamics / Switching II

MA 24.1: Vortrag

Donnerstag, 29. März 2007, 10:15–10:30, H23

Non-ballistic precessional magnetic random access memories. — •F. Porrati and M. Huth — Physikalisches Institut, J. W. Goethe-Universität, Max-von-Laue-Str. 1, 60438 Frankfurt am Main

We present a novel magnetic random access memory (MRAM) architecture, the non-ballistic precessional MRAM, and a related bit addressing scheme based on the sequential application of two unipolar magnetic field pulses. We perform micromagnetic simulations to study the magnetization trajectories and the stability of the states obtained after switching of the magnetization direction. Despite the presence of damped oscillations the final states are stable for field pulses of subnanosecond duration.