Regensburg 2007 – wissenschaftliches Programm
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MM: Fachverband Metall- und Materialphysik
MM 20: Poster session
MM 20.11: Poster
Dienstag, 27. März 2007, 14:45–18:00, Poster C
ELNES at Internal Copper-Silicon Dioxide Interfaces — •Oliver Heckl1, Ferdinand Haider1, and Jürgen Gegner2 — 1Universität Augsburg, Institut für Physik, Lehrstuhl für Experimentalphysik I, Physik Geb. Nord, Ebene 3, Universitätsstr. 1, D-86159 Augsburg — 2SKF GmbH, Department of Material Physics, Ernst-Sachs-Str. 5, D-97424 Schweinfurt, Germany, E-mail: juergen.gegner@skf.com
Metal-silicon dioxide interfaces are of special importance in semiconductor technologies (e.g. MOS structures). A Cu-Si alloy containing 1.5 at.% Si is produced by arc melting. Samples of 200µm in thickness are completely internally oxidized in a Rhines pack powder mixture at 1000∘C. Spherical amorphous SiO2 precipitations are formed homogeneously dispersed within the copper matrix.
The heterophase boundary between the base metal and the embedded oxide particles is examined with high spatial resolution using a scanning transmission electron microscope (STEM) that is equipped with an electron energy loss (EEL) spectrometer. Typical features of the electron energy loss near-edge fine structure (ELNES) of the oxygen O-K ionization edge allow to determine the bonding state of oxygen and thus to detect interlayers at the phase boundary. The validity of the Kirchheim structural vacancy model of oxygen segregation at metal-oxide interfaces shall be verified this way: for amorphous precipitations, it predicts that no interfacial accumulation of excess oxygen atoms should occur.