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MM: Fachverband Metall- und Materialphysik
MM 22: SYM Physics meets Industry
MM 22.3: Talk
Wednesday, March 28, 2007, 15:25–15:45, H16
Advanced Residual Stress Investigation Utilizing Laboratory X-Ray Diffraction Instrumentation — •Lutz Brügemann and Jens Brechbühl — Bruker AXS, Karlsruhe, Germany
Different methods for the determination of material properties like hardness, tensile strength, and Young*s modulus are limited in their ability to characterize the performance of a material or a work piece entirely. However, X-ray diffraction based methods enable a non-destructive approach to the internal stress state of a work piece after even after heat treatment/hardening and/or grinding. Additionally, due to X-rays capability to penetrate the material, those diffraction based residual stress investigations allow determining volume information from some microns below the sample surface. By utilizing those methods even a depth profile/stress gradient can be studied.
Residual stress investigations are also of very high interest for wafer manufacturing. Thin Cu films or damascene Cu lines on Si-wafers need to be investigated with high lateral resolution (micro-diffraction). XRD2 using a 2-D photon counting detector is the right method allowing fast measurements although the signals are weak due to the small illuminated volume. Additionally, the commonly strong texture of the thin Cu lines can be recorded and considered simultaneously, and hence will not impede the stress measurements and data evaluation.
The goal of the presentation is to give a wider view of the principles of the residual stress investigations by using X-rays. By means of case studies the capabilities of laboratory instrumentation is presented.