Regensburg 2007 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe

MM: Fachverband Metall- und Materialphysik

MM 23: Nano structured materials I

MM 23.2: Vortrag

Mittwoch, 28. März 2007, 15:00–15:15, H4

Nanowire Devices formed by Wet Chemistry — •Mady Elbahri, Khaled Hirmas, and Rainer Adelung — Chair for Multicomponent Materials, Technical Faculty, University of Kiel, Germany

The electronic structure of polycrystalline nanowires is modified if molecules attach on their surfaces. Employing this effect, sensor demonstration devices have been built. For example, interparticle boundaries of metallic nanowires have been used to sense different gases [1]. Semiconductor nanowires can be utilized as gates in field effect transistors to detect electric fields caused by atoms around them [2]. Even though these demonstrators show the potential of nanowires in sensing technology, simple and cost effective methods suitable for mass fabrication are still not established. Surprisingly, we found that nanowires formed by wet chemical methods [3] can be reproducibly aligned with high precision. Therefore, the nanowire fabrication is not performed in a beaker, but directly on a silicon chip surface. By using masks with relatively large structure sizes (>0,05 mm), we show how wet chemically produced metal (Ag) as well as semiconducting (ZnO) nanowire patterns like rings and arrays of parallel wires form at well defined positions on a silicon chip surface. Beside the details of the fabrication scheme, the electrical and electronic properties of the devices will be discussed.

[1] B. J. Murray, E. C. Walter, and R. M. Penner, Nano Lett. 4, 665, (2004). [2] F. Patolsky and C. M. Lieber, Mat. Today 8(4), 20 (2005). [3] M. Elbahri, R. Adelung, and D. Paretkar, Deutsches Patentamt, DE 10 2005 060 407.2 (2006).